AO8808A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO8808A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7.2 ns
Cossⓘ - Выходная емкость: 232 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
Тип корпуса: TSSOP-8
AO8808A Datasheet (PDF)
ao8808a.pdf
AO8808ADual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8808A uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 7.9A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)
ao8808a.pdf
AO8808Awww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA = 25
ao8801a.pdf
AO8801A20V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO8801A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -4.5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)
ao8803.pdf
AO8803Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8803/L uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and ID = -7 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
ao8806.pdf
AO8806Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8806 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 7 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
ao8801.pdf
AO8801Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8801 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and operation ID = -4.7 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is RDS(ON)
ao8804.pdf
AO8804Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8804 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 8A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)
ao8807.pdf
AO8807Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8807 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and ID = -6.5 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
ao8801.pdf
AO8801www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2P-Channel
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918