AOB11S60 - описание и поиск аналогов

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin

isc N-Channel MOSFET Transistor AOB11S60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 TM 600V 11A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced IDM 45A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.399W levels of performance and robustness in switching applications. Qg,typ 11

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

isc N-Channel MOSFET Transistor AOB11S65 FEATURES Drain Current I =11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo