Справочник MOSFET. AOB11S60

 

AOB11S60 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AOB11S60
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 178 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 37.3 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.399 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для AOB11S60

   - подбор ⓘ MOSFET транзистора по параметрам

 

AOB11S60 Datasheet (PDF)

 ..1. Size:292K  aosemi
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AOB11S60

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

 ..2. Size:253K  inchange semiconductor
 aob11s60.pdf pdf_icon

AOB11S60

isc N-Channel MOSFET Transistor AOB11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 0.1. Size:292K  aosemi
 aob11s60l.pdf pdf_icon

AOB11S60

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

 7.1. Size:300K  aosemi
 aob11s65l.pdf pdf_icon

AOB11S60

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AO8830 , AO9926B , AO9926C , AOB10N60 , AOB10T60P , AOB1100L , AOB11C60 , AOB11N60 , AO3407 , AOB11S65 , AOB12N50 , AOB12N60FD , AOB12T60P , AOB1404L , AOB14N50 , AOB15S60 , AOB15S65 .

History: PSMN5R0-100PS | MMQ60R115PTH | VBE1638 | IRFS621 | IRF540ZSPBF | AFN08N50T220T

 

 
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