Справочник MOSFET. AOB1606L

 

AOB1606L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOB1606L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 417 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 178 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 85 nC
   trⓘ - Время нарастания: 31 ns
   Cossⓘ - Выходная емкость: 872 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для AOB1606L

 

 

AOB1606L Datasheet (PDF)

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 aob1606l.pdf

AOB1606L AOB1606L

AOT1606L/AOB1606L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1606L/AOB1606L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 178Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 ..2. Size:253K  inchange semiconductor
 aob1606l.pdf

AOB1606L AOB1606L

isc N-Channel MOSFET Transistor AOB1606LFEATURESDrain Current I = 178A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:490K  aosemi
 aob160a60l.pdf

AOB1606L AOB1606L

AOTF160A60L/AOT160A60L/AOB160A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 8.2. Size:415K  aosemi
 aob1608l.pdf

AOB1606L AOB1606L

AOT1608L/AOB1608L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1608L/AOB1608L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 140Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 8.3. Size:253K  inchange semiconductor
 aob1608l.pdf

AOB1606L AOB1606L

isc N-Channel MOSFET Transistor AOB1608LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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