AOB2618L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOB2618L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 41.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 31 ns
Cossⓘ - Выходная емкость: 108 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
Тип корпуса: TO-263
AOB2618L Datasheet (PDF)
aob2618l.pdf
AOT2618L/AOB2618L/AOTF2618L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2618L & AOB2618L & AOTF2618L uses trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aob2618l.pdf
isc N-Channel MOSFET Transistor AOB2618LFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 19m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener
aob260l.pdf
AOT260L/AOB260L60V N-Channel MOSFETGeneral Description Product SummaryThe AOT(B)260L uses Trench MOSFET technology that VDS60Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 140Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)
aob264l aot264l.pdf
AOT264L/AOB264L60V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOT264L/AOB264L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 140Aprovide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
aob2608l.pdf
AOT2608L/AOB2608L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72Atechnology that is uniquely optimized to provide the mostefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
aob2606l.pdf
AOT2606L/AOB2606L/AOTF2606L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2606L & AOB2606L & AOTF2606L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aob266l.pdf
AOT266L/AOB266L/AOTF266L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT266L & AOB266L & AOTF266L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aob262l.pdf
AOT262L/AOB262L60V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)
aob260l.pdf
Isc N-Channel MOSFET Transistor AOB260lFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
aob2608l.pdf
isc N-Channel MOSFET Transistor AOB2608LFEATURESDrain Current I = 72A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
aob2606l.pdf
sc N-Channel MOSFET Transistor AOB2606LFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATING
aob266l.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOB266LFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
aob264l.pdf
isc N-Channel MOSFET Transistor AOB264LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
aob262l.pdf
isc N-Channel MOSFET Transistor AOB262LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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