AOT266L/AOB266L/AOTF266L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT266L & AOB266L & AOTF266L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOB266LFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

AOT260L/AOB260L60V N-Channel MOSFETGeneral Description Product SummaryThe AOT(B)260L uses Trench MOSFET technology that VDS60Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 140Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

AOT2618L/AOB2618L/AOTF2618L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2618L & AOB2618L & AOTF2618L uses trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT264L/AOB264L60V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOT264L/AOB264L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 140Aprovide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

AOT2608L/AOB2608L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72Atechnology that is uniquely optimized to provide the mostefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOT2606L/AOB2606L/AOTF2606L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2606L & AOB2606L & AOTF2606L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT262L/AOB262L60V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)

Isc N-Channel MOSFET Transistor AOB260lFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

isc N-Channel MOSFET Transistor AOB2618LFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 19m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

isc N-Channel MOSFET Transistor AOB2608LFEATURESDrain Current I = 72A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

sc N-Channel MOSFET Transistor AOB2606LFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor AOB264LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

isc N-Channel MOSFET Transistor AOB262LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene