AOB266L - описание и поиск аналогов

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to ID (at VGS=10V) 140A/78A provide the most efficient high frequency switching RDS(ON) (at VGS=10V)

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOB266L FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 140A provide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

AOT2608L/AOB2608L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72A technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 140A provide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

AOT262L/AOB262L 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)

Isc N-Channel MOSFET Transistor AOB260l FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

isc N-Channel MOSFET Transistor AOB2618L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 19m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener

isc N-Channel MOSFET Transistor AOB2608L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

sc N-Channel MOSFET Transistor AOB2606L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor AOB264L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

isc N-Channel MOSFET Transistor AOB262L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene