AOB298L - описание и поиск аналогов

AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description Product Summary VDS The AOT298L & AOB298L & AOTF298L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOB298L DESCRIPTION Drain Current I = 58A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlig

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

AOT29S50/AOB29S50/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced MOSTM high voltage IDM 120A process that is designed to deliver high levels of RDS(ON),max 0.15 performance and robustness in switching applications. Qg,typ 26.6nC By provi

AOT2904/AOB2904 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl

AOT2906/AOB2906 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V)

AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary VDS The AOT296L/AOB296L uses Trench MOSFET 100V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

AOT292L/AOB292L 100V N-Channel MOSFET General Description Product Summary VDS The AOT292L/AOB292L uses Trench MOSFET 100V ID (at VGS=10V) 105A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary VDS The AOT296L/AOB296L uses Trench MOSFET 100V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

AOT292L/AOB292L/AOTF292L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOB290L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor AOB29S50 FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor AOB2904 FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

isc N-Channel MOSFET Transistor AOB2910L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 23.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge

isc N-Channel MOSFET Transistor AOB2906 FEATURES Drain Current I = 122A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

isc N-Channel MOSFET Transistor AOB296L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

isc N-Channel MOSFET Transistor AOB292L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

isc N-Channel MOSFET Transistor AOB2918L FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener