AOB442 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AOB442
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 105 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 744 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
Тип корпуса: TO-263
Аналог (замена) для AOB442
AOB442 Datasheet (PDF)
aob442.pdf

AOB44240V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS40VThe AOB442 is fabricated with SDMOSTM trench 105A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate
aob442.pdf

isc N-Channel MOSFET Transistor AOB442FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener
aob440.pdf

AOB440N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOB440 uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 75 A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
aob440.pdf

isc N-Channel MOSFET Transistor AOB440FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
Другие MOSFET... AOB411L , AOB412L , AOB414 , AOB416 , AOB4184 , AOB418L , AOB42S60 , AOB440 , 4N60 , AOB462L , AOB466L , AOB470L , AOB480L , AOB482L , AOB4S60 , AOB7S60 , AOB7S65 .
History: SUP28N15-52 | 2SK2081-01 | VBK3215N | IXFN132N50P3 | P1625ED | P1010AT | VBL165R10
History: SUP28N15-52 | 2SK2081-01 | VBK3215N | IXFN132N50P3 | P1625ED | P1010AT | VBL165R10



Список транзисторов
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