AOD256 - Даташиты. Аналоги. Основные параметры

AOD256150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD256 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 19Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOD256FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

AOD254150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD254 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

AOD2544150V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 150V Very Low RDS(ON) ID (at VGS=10V) 23A Low Gate Charge RDS(ON) (at VGS=10V)

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD254FEATURESStatic drain-source on-resistance:RDS(on)46m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-S

isc N-Channel MOSFET Transistor AOD2544FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 54m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose