AOD2N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD2N60
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 56.8 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 2 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 14.3 ns
Выходная емкость (Cd): 29 pf
Сопротивление сток-исток открытого транзистора (Rds): 4.4 Ohm
Тип корпуса: TO-252
AOD2N60 Datasheet (PDF)
aod2n60.pdf
AOD2N60/AOU2N60600V, 2A N-Channel MOSFETGeneral Description Product SummaryThe AOD2N60 & AOU2N60 have been fabricated usingan advanced high voltage MOSFET process that isVDS 700V@150designed to deliver high levels of performance and ID (at VGS=10V) 2Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)
aod2n60.pdf
isc N-Channel MOSFET Transistor AOD2N60FEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod2n60a.pdf
AOD2N60A/AOI2N60A/AOU2N60A600V,2A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Advanced High Voltage MOSFET technology Low RDS(ON) ID (at VGS=10V) 2A Low Ciss and Crss RDS(ON) (at VGS=10V)
aod2n60a.pdf
isc N-Channel MOSFET Transistor AOD2N60AFEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod2n100.pdf
AOD2N1001000V,2A N-Channel MOSFETGeneral Description Product SummaryThe AOD2N100 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 1100V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 2ADC applications. RDS(ON) (at VGS=10V)
aod2n100.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD2N100FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 6N60KG-TN3-R
