Справочник MOSFET. AOD3N50

 

AOD3N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOD3N50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 57 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.7 nC
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 31.4 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AOD3N50

 

 

AOD3N50 Datasheet (PDF)

 ..1. Size:273K  aosemi
 aod3n50.pdf

AOD3N50 AOD3N50

AOD3N50/AOU3N50500V, 3A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N50 & AOU3N50 have been fabricated usingan advanced high voltage MOSFET process that isVDS 600V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.8Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..2. Size:701K  aosemi
 aod3n50 aou3n50.pdf

AOD3N50 AOD3N50

AOD3N50/AOU3N50500V, 3A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N50 & AOU3N50 have been fabricated usingan advanced high voltage MOSFET process that isVDS 600V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.8Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..3. Size:265K  inchange semiconductor
 aod3n50.pdf

AOD3N50 AOD3N50

isc N-Channel MOSFET Transistor AOD3N50FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:276K  aosemi
 aod3n60.pdf

AOD3N50 AOD3N50

AOD3N60/AOU3N60600V,2.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N60 & AOU3N60 have been fabricated usingan advanced high voltage MOSFET process that is VDS 700V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.5Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 9.2. Size:389K  aosemi
 aod3n40.pdf

AOD3N50 AOD3N50

AOD3N40400V,2.6A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N40 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 500V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.6ADC applications. RDS(ON) (at VGS=10V)

 9.3. Size:339K  aosemi
 aod3n80.pdf

AOD3N50 AOD3N50

AOD3N80800V,2.8A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N80 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 900V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.8ADC applications. RDS(ON) (at VGS=10V)

 9.4. Size:265K  inchange semiconductor
 aod3n60.pdf

AOD3N50 AOD3N50

isc N-Channel MOSFET Transistor AOD3N60FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =3.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.5. Size:265K  inchange semiconductor
 aod3n40.pdf

AOD3N50 AOD3N50

isc N-Channel MOSFET Transistor AOD3N40FEATURESDrain Current I = 2.6A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =3.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.6. Size:208K  inchange semiconductor
 aod3n80.pdf

AOD3N50 AOD3N50

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD3N80FEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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