AOD4126 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD4126
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 43 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 28 nC
trⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 165 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
Тип корпуса: TO-252
AOD4126 Datasheet (PDF)
aod4126.pdf
AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
aod4126 aoi4126.pdf
AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
aod4126.pdf
isc N-Channel MOSFET Transistor AOD4126FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod4128.pdf
AOD4128N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AOD4128 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and low gate resistance.VDS (V) = 25VThis device is ideally suited for use as a low side switch inID = 60 A (VGS = 10V)CPU core power conversion. The device can also be usedRDS(ON)
aod4124.pdf
AOD4124100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOD4124 is fabricated with SDMOSTM trench 54A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate
aod4120.pdf
AOD4120N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD4120 uses advanced trench technology and VDS (V) = 20Vdesign to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)
aod4128.pdf
isc N-Channel MOSFET Transistor AOD4128FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod4124.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD4124FEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyLoad switchingGeneral purpose applicationsSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =
aod4120.pdf
isc N-Channel MOSFET Transistor AOD4120FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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