AOD4128 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD4128
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 75 W
Предельно допустимое напряжение сток-исток |Uds|: 25 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 60 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 17.7 ns
Выходная емкость (Cd): 731 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm
Тип корпуса: TO-252
AOD4128 Datasheet (PDF)
aod4128.pdf
AOD4128N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AOD4128 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and low gate resistance.VDS (V) = 25VThis device is ideally suited for use as a low side switch inID = 60 A (VGS = 10V)CPU core power conversion. The device can also be usedRDS(ON)
aod4128.pdf
isc N-Channel MOSFET Transistor AOD4128FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod4126.pdf
AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
aod4124.pdf
AOD4124100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOD4124 is fabricated with SDMOSTM trench 54A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate
aod4120.pdf
AOD4120N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD4120 uses advanced trench technology and VDS (V) = 20Vdesign to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)
aod4126 aoi4126.pdf
AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
aod4126.pdf
isc N-Channel MOSFET Transistor AOD4126FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod4124.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD4124FEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyLoad switchingGeneral purpose applicationsSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =
aod4120.pdf
isc N-Channel MOSFET Transistor AOD4120FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
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