AOD4132N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4132 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 85A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)

AOD4132www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOL

isc N-Channel MOSFET Transistor AOD4132FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

AOD4130/AOI413060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOD4130/AOI4130 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 30Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

AOD413A40V P-Channel MOSFETGeneral Description FeaturesThe AOD413A uses advanced trench technology and VDS (V) = -40Vdesign to provide excellent RDS(ON) with low gateID = -12A (VGS = -10V)charge. With the excellent thermal resistance of theRDS(ON)

AOD4136N-Channel SDMOSTM POWER TransistorGeneral Description FeaturesVDS (V) = 25VThe AOD4136 is fabricated with SDMOSTM trenchID = 25A (VGS = 10V)technology that combines excellent RDS(ON) with lowgate charge. The result is outstanding efficiency with RDS(ON)

AOD4130/AOI413060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOD4130/AOI4130 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 30Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

AOB413/AOD41330A 40V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -40VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR = 30mDS(on) (TYP)RoHS standard.I = -30AD2 Features Fast switching Low on resistance Low gate charge Low reverse tr

SMD Type MOSFETP-Channel MOSFETAOD413 (KOD413)TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-40V ID =-12 A (VGS =-10V) RDS(ON) 45m (VGS =-10V)0.1270.80+0.1 max-0.1 RDS(ON) 69m (VGS =-4.5V)1 Gate2 Drain2.3 0.60+ 0.1- 0.13 Source+0.154.60 -0.154 DrainDGS Absol

AOD4130www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

isc P-Channel MOSFET Transistor AOD413AFEATURESDrain Current I = -12A@ T =25D CDrain Source Voltage-: V =-40V(Min)DSSStatic Drain-Source On-Resistance: R =11m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOD4136FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =11m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD4130FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25