AOD444 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD444
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 20 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 3.8 nC
Время нарастания (tr): 3.4 ns
Выходная емкость (Cd): 61 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
Тип корпуса: TO-252
AOD444 Datasheet (PDF)
aod444.pdf
AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use
aod444 aoi444.pdf
AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use
aod444.pdf
SMD Type MOSFETN-Channel MOSFETAOD444 (KOD444)TO-252Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)D0.127 RDS(ON) 85m (VGS = 4.5V)+0.10.80-0.1max+ 0.12.3 0.60- 0.1+0.154.60 -0.15GS Absolute Maximum Ratings Ta = 25Parame
aod444.pdf
AOD444www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor D
aod444.pdf
isc N-Channel MOSFET Transistor AOD444FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod4454.pdf
AOD4454150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD4454 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
aod448.pdf
AOD448N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD448 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 75A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod442 aoi442.pdf
AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM
aod442.pdf
AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM
aod442g.pdf
AOD442G60V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 40A Logic Level Driving RDS(ON) (at VGS=10V)
aod446.pdf
AOD446N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesVDS (V) = 75VThe AOD446 uses advanced trench technology andID = 10 A (VGS = 20V)design to provide excellent RDS(ON) with low gateRDS(ON)
aod4454.pdf
isc N-Channel MOSFET Transistor AOD4454FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R =94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod442.pdf
isc N-Channel MOSFET Transistor AOD442FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral
aod442g.pdf
isc N-Channel MOSFET Transistor AOD442GFEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
aod446.pdf
isc N-Channel MOSFET Transistor AOD446FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
