AOD446N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesVDS (V) = 75VThe AOD446 uses advanced trench technology andID = 10 A (VGS = 20V)design to provide excellent RDS(ON) with low gateRDS(ON)

isc N-Channel MOSFET Transistor AOD446FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

AOD4454150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD4454 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

AOD448N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD448 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 75A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM

AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM

AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use

AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use

AOD442G60V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 40A Logic Level Driving RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAOD444 (KOD444)TO-252Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)D0.127 RDS(ON) 85m (VGS = 4.5V)+0.10.80-0.1max+ 0.12.3 0.60- 0.1+0.154.60 -0.15GS Absolute Maximum Ratings Ta = 25Parame

AOD444www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor D

isc N-Channel MOSFET Transistor AOD4454FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R =94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOD442FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral

isc N-Channel MOSFET Transistor AOD444FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOD442GFEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera