HAF1001 datasheet, аналоги, основные параметры

Наименование производителя: HAF1001  📄📄 

Тип транзистора: FET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm

Тип корпуса: TO220AB

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Аналог (замена) для HAF1001

- подборⓘ MOSFET транзистора по параметрам

 

HAF1001 даташит

 8.1. Size:110K  1
 haf1008l haf1008s.pdf pdf_icon

HAF1001

HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temper

 8.2. Size:200K  renesas
 haf1002l haf1002s.pdf pdf_icon

HAF1001

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:56K  hitachi
 haf1003l haf1003s.pdf pdf_icon

HAF1001

HAF1003(L), HAF1003(S) Silicon P Channel MOS FET Series Power Switching ADE-208-626B (Z) 3rd. Edition July 2000 This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature lik

 8.4. Size:75K  hitachi
 haf1004l haf1004s.pdf pdf_icon

HAF1001

HAF1004(L), HAF1004(S) Silicon P Channel MOS FET Series Power Switching ADE-208-629B (Z) 3rd. Edition May 2002 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temp

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... GFP50N03, GFP70N03, H5N2001LD, H5N2001LS, H5N2503P, H5N5004PL, H5N5005PL, H7N0302LS, IRF730, HAF1002, HAF1003, HAF1004, HAF1005, HAF2001, HAF2002, HAF2005, HAF2007