Справочник MOSFET. AOD7N65

 

AOD7N65 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AOD7N65
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 178 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 43 ns
   Cossⓘ - Выходная емкость: 86 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.56 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для AOD7N65

   - подбор ⓘ MOSFET транзистора по параметрам

 

AOD7N65 Datasheet (PDF)

 ..1. Size:461K  aosemi
aod7n65.pdfpdf_icon

AOD7N65

AOD7N65/AOI7N65650V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N65 & AOI7N65 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 750V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 ..2. Size:265K  inchange semiconductor
aod7n65.pdfpdf_icon

AOD7N65

isc N-Channel MOSFET Transistor AOD7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:387K  aosemi
aod7n60.pdfpdf_icon

AOD7N65

AOD7N60/AOI7N60600V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N60 & AOI7N60 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 700V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 8.2. Size:265K  inchange semiconductor
aod7n60.pdfpdf_icon

AOD7N65

isc N-Channel MOSFET Transistor AOD7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Другие MOSFET... AOD5N40 , AOD5N50 , AOD5T40P , AOD603A , AOD607 , AOD609 , AOD6N50 , AOD7N60 , IRFB31N20D , AOD7S60 , AOD7S65 , AOD8N25 , AOD9N40 , AOD9N50 , AOD9N52 , AOD9T40P , AOH3106 .

History: CMRDM3590 | PSMN5R0-100PS | MMQ60R115PTH | IRF540ZSPBF

 

 
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