Справочник MOSFET. AOD9N52

 

AOD9N52 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOD9N52
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 178 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 520 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 44 ns
   Cossⓘ - Выходная емкость: 98 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.86 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AOD9N52

 

 

AOD9N52 Datasheet (PDF)

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 aod9n52.pdf

AOD9N52 AOD9N52

AOD9N52520V,9A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N52 have been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 620V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 9ADC applications. RDS(ON) (at VGS=10V)

 ..2. Size:208K  inchange semiconductor
 aod9n52.pdf

AOD9N52 AOD9N52

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD9N52FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 8.1. Size:388K  aosemi
 aod9n50.pdf

AOD9N52 AOD9N52

AOD9N50/AOI9N50500V,9A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N50 & AOI9N50 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 600V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 9Apopular AC-DC applications. RDS(ON) (at VGS=10V)

 8.2. Size:266K  inchange semiconductor
 aod9n50.pdf

AOD9N52 AOD9N52

isc N-Channel MOSFET Transistor AOD9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.86(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:261K  aosemi
 aod9n40.pdf

AOD9N52 AOD9N52

AOD9N40400V,8A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high 500V@150 VDSlevels of performance and robustness in popular AC-DC ID (at VGS=10V) 8Aapplications.By providing low RDS(on), Ciss and Crss along

 9.2. Size:265K  inchange semiconductor
 aod9n40.pdf

AOD9N52 AOD9N52

isc N-Channel MOSFET Transistor AOD9N40FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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