Справочник MOSFET. AOI4184

 

AOI4184 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOI4184
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 17.2 ns
   Cossⓘ - Выходная емкость: 215 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO-251A

 Аналог (замена) для AOI4184

 

 

AOI4184 Datasheet (PDF)

 ..1. Size:344K  aosemi
 aoi4184.pdf

AOI4184 AOI4184

AOD4184/AOI418440V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOD4184/AOI4184 used advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 50Alow gate charge. With the excellent thermal resistance of RDS(ON) (at VGS=10V)

 ..2. Size:258K  inchange semiconductor
 aoi4184.pdf

AOI4184 AOI4184

isc N-Channel MOSFET Transistor AOI4184FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral

 8.1. Size:269K  aosemi
 aod4185 aoi4185.pdf

AOI4184 AOI4184

AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)

 8.2. Size:269K  aosemi
 aoi4185.pdf

AOI4184 AOI4184

AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)

 8.3. Size:280K  aosemi
 aoi418.pdf

AOI4184 AOI4184

AOD418/AOI41830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD418/AOI418 uses advanced trench technology to 30V36Aprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V)resistance. With the excellent thermal resistance of the

 8.4. Size:240K  inchange semiconductor
 aoi4185.pdf

AOI4184 AOI4184

isc P-Channel MOSFET Transistor AOI4185FEATURESDrain Current I = -40A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R =15m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.5. Size:257K  inchange semiconductor
 aoi418.pdf

AOI4184 AOI4184

isc N-Channel MOSFET Transistor AOI418FEATURESDrain Current I = 36A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top