AOI4185 - описание и поиск аналогов

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench VDS (V) = -40V technology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON)

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench VDS (V) = -40V technology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON)

isc P-Channel MOSFET Transistor AOI4185 FEATURES Drain Current I = -40A@ T =25 D C Drain Source Voltage- V = -40V(Min) DSS Static Drain-Source On-Resistance R =15m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary VDS 40V The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 50A low gate charge. With the excellent thermal resistance of RDS(ON) (at VGS=10V)

AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary VDS 40V The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 50A low gate charge. With the excellent thermal resistance of RDS(ON) (at VGS=10V)

AOD418/AOI418 30V N-Channel MOSFET General Description Product Summary VDS The AOD418/AOI418 uses advanced trench technology to 30V 36A provide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V) resistance. With the excellent thermal resistance of the

isc N-Channel MOSFET Transistor AOI4184 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general

isc N-Channel MOSFET Transistor AOI418 FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera