HAF2007 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HAF2007
Тип транзистора: FET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
Тип корпуса: DPAK
- подбор MOSFET транзистора по параметрам
HAF2007 Datasheet (PDF)
haf2007l haf2007s.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
haf2007-90s.pdf

HAF2007-90Swww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mo
haf2011l haf2011s.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
haf2012l haf2012s.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... HAF1001 , HAF1002 , HAF1003 , HAF1004 , HAF1005 , HAF2001 , HAF2002 , HAF2005 , IRFZ48N , HAF2008 , HAF2011 , HAF2012 , HAT1031T , HAT1033T , HAT1036R , HAT1040T , HAT1041T .
History: 1N40 | 2SK1064 | ATP207 | WMO07N70C4 | RZQ050P01 | AM7961P | 2SK2882
History: 1N40 | 2SK1064 | ATP207 | WMO07N70C4 | RZQ050P01 | AM7961P | 2SK2882



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