Справочник MOSFET. AON2406

 

AON2406 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON2406
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12.5 nC
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
   Тип корпуса: DFN2X2B

 Аналог (замена) для AON2406

 

 

AON2406 Datasheet (PDF)

 ..1. Size:247K  aosemi
 aon2406.pdf

AON2406 AON2406

AON240620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2406 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 8.1. Size:240K  aosemi
 aon2401.pdf

AON2406 AON2406

AON24018V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2401 combines advanced trench MOSFET -8Vtechnology with a low resistance package to provide ID (at VGS=-2.5V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-2.5V)

 8.2. Size:260K  aosemi
 aon2407.pdf

AON2406 AON2406

AON240730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2407 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -6.3Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V)

 8.3. Size:234K  aosemi
 aon2400.pdf

AON2406 AON2406

AON24008V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2400 combines advanced trench MOSFET 8Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS = 2.5V)

 8.4. Size:221K  aosemi
 aon2403.pdf

AON2406 AON2406

AON240312V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2403 combines advanced trench MOSFET -12Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

 8.5. Size:247K  aosemi
 aon2409.pdf

AON2406 AON2406

AON240930V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V)

 8.6. Size:235K  aosemi
 aon2408.pdf

AON2406 AON2406

AON240820V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2408 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)

 8.7. Size:243K  aosemi
 aon2405.pdf

AON2406 AON2406

AON240520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON2405 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

 8.8. Size:1877K  cn vbsemi
 aon2409.pdf

AON2406 AON2406

AON2409www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced DFN2X2Package0.030 at VGS = - 4.5 V -10a- 20 18 nC- Small Footprint Area0.040 at VGS = - 2.5 V -9a- Low On-ResistanceAPPLICATIONS Load Switch, PA Switch, and Battery Switch for PortableDevice

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