AON2801 - параметры транзистора MOSFET, его аналоги, datasheet

AON2801 Datasheet (PDF)

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AON2801Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON2801/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

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AON280020V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2800 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

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AON280912V Dual P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2809 combines advanced trench MOSFET -12Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

8.3. Size:236K aosemi
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AON280320V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON2803 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.8Awith gate voltage as low as 1.8V. This device is suitable RDS(ON) (at VGS=-4.5V)