Справочник MOSFET. HAF2012

 

HAF2012 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HAF2012
   Тип транзистора: FET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
   Тип корпуса: LDPAK

 Аналог (замена) для HAF2012

 

 

HAF2012 Datasheet (PDF)

 0.1. Size:229K  renesas
 haf2012l haf2012s.pdf

HAF2012 HAF2012

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:129K  renesas
 haf2011l haf2011s.pdf

HAF2012 HAF2012

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:106K  renesas
 haf2007l haf2007s.pdf

HAF2012 HAF2012

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:1501K  cn vbsemi
 haf2007-90s.pdf

HAF2012 HAF2012

HAF2007-90Swww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mo

Другие MOSFET... HAF1004 , HAF1005 , HAF2001 , HAF2002 , HAF2005 , HAF2007 , HAF2008 , HAF2011 , AO4468 , HAT1031T , HAT1033T , HAT1036R , HAT1040T , HAT1041T , HAT1043M , HAT1044M , HAT1046R .

 

 
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