AON5802B - параметры транзистора MOSFET, его аналоги, datasheet

AON5802B Datasheet (PDF)

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AON5802B30V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON5802B uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

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AON5802BG30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V With ESD Protection to improve battery performance ID (at VGS=12V) 10A and safety RDS(ON) (at VGS=4.5V)

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AON5802A, AON5802ALCommon-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AON5802A uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V)voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

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AON5800Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON5800 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .