AON6232 - Даташиты. Аналоги. Основные параметры

AON623240V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6232 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

AON6232A40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

AON623040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6230 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)