AON6244 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AON6244
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 83 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 85 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 3 ns
Выходная емкость (Cd): 415 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0047 Ohm
Тип корпуса: DFN5X6
AON6244 Datasheet (PDF)
aon6244.pdf
AON624460V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AO6244 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS =10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS =10V)
aon6240.pdf
AON624040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6246.pdf
AON624660V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6246 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 80Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6248.pdf
AON624860V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6248 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 53Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aon6242.pdf
AON624260V N-Channel MOSFETGeneral Description Product SummaryVDS 60VThe AON6242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6240.pdf
AON624040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aon6246.pdf
AON6246www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.006 at VGS = 10 V 80 Material categorization:600.007 at VGS = 4.5 V 65DDFN5X6Top ViewTop View Bottom View1827G3645PIN1SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
