AON6404A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AON6404A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 83 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.4 V
Максимально допустимый постоянный ток стока |Id|: 85 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 6.5 ns
Выходная емкость (Cd): 720 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0023 Ohm
Тип корпуса: DFN5X6
AON6404A Datasheet (PDF)
aon6404a.pdf
AON6404A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6404A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon6404.pdf
AON640430V N-Channel MOSFETGeneral Description Product SummaryThe AON6404 combines advanced trench MOSFET VDS (V) = 30Vtechnology with a low resistance package to provideID = 85A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6407.pdf
AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6403.pdf
AON640330V P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AON6403 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6400.pdf
AON640030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6400 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon6407.pdf
AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6406.pdf
AON6406 30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power LV technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A Low Gate Charge RDS(ON) (at VGS=10V)
aon6405.pdf
AON640530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6405 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6408.pdf
AON640830V N-Channel MOSFETGeneral Description Product SummaryThe AON6408 combines advanced trench MOSFETVDS (V) = 30Vtechnology with a low resistance package to provideID = 25A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)
aon6405.pdf
AON6405www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET- 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested0.0012 at VGS = - 4.5 V - 50 Typical ESD Perf
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