Справочник MOSFET. AON6458

 

AON6458 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON6458
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 57 ns
   Cossⓘ - Выходная емкость: 167 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для AON6458

 

 

AON6458 Datasheet (PDF)

 ..1. Size:562K  aosemi
 aon6458.pdf

AON6458 AON6458

AON6458250V,14A N-Channel MOSFETGeneral Description Product SummaryThe AON6458 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of VDS 300V@150performance and robustness in popular AC-DC ID (at VGS=10V) 14Aapplications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)

 8.1. Size:643K  1
 aon6450.pdf

AON6458 AON6458

AON6450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 100VThe AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.2. Size:274K  aosemi
 aon6450.pdf

AON6458 AON6458

AON6450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 100VThe AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.3. Size:399K  aosemi
 aon6452.pdf

AON6458 AON6458

AON6452100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.4. Size:251K  aosemi
 aon6454a.pdf

AON6458 AON6458

AON6454A150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AON6454A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 31Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 8.5. Size:239K  aosemi
 aon6454.pdf

AON6458 AON6458

AON6454150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AON6454 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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