AON6482. Аналоги и основные параметры
Наименование производителя: AON6482
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 100 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.037 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для AON6482
- подборⓘ MOSFET транзистора по параметрам
AON6482 даташит
..1. Size:245K aosemi
aon6482.pdf 
AON6482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 28A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
8.1. Size:358K aosemi
aon6484.pdf 
AON6484 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6484 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 12A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
8.2. Size:243K aosemi
aon6486.pdf 
AON6486 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON6486 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
9.1. Size:643K 1
aon6450.pdf 
AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
9.2. Size:265K 1
aon6414al.pdf 
AON6414AL 30V N-Channel MOSFET General Description Product Summary VDS The AON6414AL uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and
9.3. Size:268K 1
aon6407.pdf 
AON6407 30V P-Channel MOSFET General Description Product Summary VDS The AON6407 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
9.4. Size:262K 1
aon6411.pdf 
AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
9.5. Size:562K aosemi
aon6458.pdf 
AON6458 250V,14A N-Channel MOSFET General Description Product Summary The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 14A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)
9.6. Size:274K aosemi
aon6450.pdf 
AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
9.7. Size:390K aosemi
aon6424.pdf 
AON6424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6424 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
9.8. Size:149K aosemi
aon6426.pdf 
AON6426 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide ID = 65A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)
9.9. Size:301K aosemi
aon6428.pdf 
AON6428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
9.10. Size:305K aosemi
aon6442.pdf 
AON6442 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 32A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.11. Size:384K aosemi
aon6414al.pdf 
AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
9.13. Size:399K aosemi
aon6452.pdf 
AON6452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
9.14. Size:268K aosemi
aon6414a.pdf 
AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
9.15. Size:158K aosemi
aon6410.pdf 
AON6410 30V N-Channel MOSFET General Description Product Summary The AON6410 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 24A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON)
9.16. Size:267K aosemi
aon6435.pdf 
AON6435 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6435 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -34A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
9.17. Size:159K aosemi
aon6404.pdf 
AON6404 30V N-Channel MOSFET General Description Product Summary The AON6404 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 85A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)
9.18. Size:231K aosemi
aon6403.pdf 
AON6403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
9.19. Size:273K aosemi
aon6448.pdf 
AON6448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON6448 is fabricated with SDMOSTM trench ID (at VGS=10V) 65A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
9.20. Size:226K aosemi
aon6400.pdf 
AON6400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6400 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.21. Size:251K aosemi
aon6454a.pdf 
AON6454A 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 31A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
9.22. Size:156K aosemi
aon6414.pdf 
AON6414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.23. Size:268K aosemi
aon6416.pdf 
AON6416 30V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 30V The AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
9.24. Size:264K aosemi
aon6444.pdf 
AON6444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON6444 is fabricated with SDMOSTM trench ID (at VGS=10V) 81A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
9.25. Size:262K aosemi
aon6407.pdf 
AON6407 30V P-Channel MOSFET General Description Product Summary VDS The AON6407 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
9.26. Size:306K aosemi
aon6418.pdf 
AON6418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.27. Size:189K aosemi
aon6404a.pdf 
AON6404A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6404A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.28. Size:245K aosemi
aon6406.pdf 
AON6406 30V N-Channel MOSFET General Description Product Summary VDS 30V Latest Trench Power LV technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A Low Gate Charge RDS(ON) (at VGS=10V)
9.29. Size:239K aosemi
aon6454.pdf 
AON6454 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
9.30. Size:262K aosemi
aon6411.pdf 
AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
9.31. Size:155K aosemi
aon6422.pdf 
AON6422 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6422 combines advanced trench MOSFET technology with a low resistance package to provide ID = 80A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)
9.32. Size:245K aosemi
aon6405.pdf 
AON6405 30V P-Channel MOSFET General Description Product Summary VDS The AON6405 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
9.33. Size:151K aosemi
aon6408.pdf 
AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 25A (VGS = 10V) extremely low RDS(ON). This device is for PWM RDS(ON)
9.34. Size:278K aosemi
aon6413.pdf 
AON6413 30V P-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V)
9.35. Size:874K cn vbsemi
aon6405.pdf 
AON6405 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switch VDS (V) RDS(on) ( ) Max. applications ID a Qg (Typ.) Extremely low RDS(on) 0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET - 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested 0.0012 at VGS = - 4.5 V - 50 Typical ESD Perf
Другие MOSFET... AON6440
, AON6442
, AON6444
, AON6448
, AON6450
, AON6452
, AON6454A
, AON6458
, 12N60
, AON6484
, AON6486
, AON6500
, AON6502
, AON6504
, AON6506
, AON6508
, AON6510
.
History: PSMN1R1-40BS
| AON6506
| F35W60C3
