AON6760
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AON6760
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 39
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 36
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 3
ns
Cossⓘ - Выходная емкость: 515
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0039
Ohm
Тип корпуса:
DFN5X6
Аналог (замена) для AON6760
-
подбор ⓘ MOSFET транзистора по параметрам
AON6760
Datasheet (PDF)
..1. Size:313K aosemi
aon6760.pdf 
AON676030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
8.1. Size:242K aosemi
aon6764.pdf 
AON676430V N-Channel SRFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:268K 1
aon6786.pdf 
AON678630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.2. Size:262K 1
aon6790.pdf 
AON679030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
9.3. Size:331K aosemi
aon6792.pdf 
AON679230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:301K aosemi
aon6774.pdf 
AON677430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
9.5. Size:243K aosemi
aon6794.pdf 
AON679430V N-Channel SRFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:155K aosemi
aon6708.pdf 
AON670830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS (V) = 30VSRFETTM The AON6708 uses advanced trenchID = 30A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON) and low gateRDS(ON)
9.7. Size:269K aosemi
aon6702.pdf 
AON670230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS 30VSRFETTM AON6702 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.8. Size:153K aosemi
aon6718l.pdf 
AON6718LN-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesSRFETTM AON6718L uses advanced trench technology VDS (V) = 30Vwith a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ID = 80A (VGS = 10V)ideally suited for use as a low side switch in CPU core RDS(ON)
9.9. Size:354K aosemi
aon6734.pdf 
AON673430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:279K aosemi
aon6716.pdf 
AON671630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS 30VSRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.11. Size:268K aosemi
aon6788.pdf 
AON678830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.12. Size:133K aosemi
aon6712.pdf 
AON671230V N-Channel MOSFETSRFET TM General Description Product SummaryThe AON6712 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 20A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)
9.13. Size:340K aosemi
aon6756.pdf 
AON675630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.14. Size:287K aosemi
aon6754.pdf 
AON675430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.15. Size:293K aosemi
aon6758.pdf 
AON675830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.16. Size:256K aosemi
aon6780.pdf 
AON678030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
9.17. Size:290K aosemi
aon6752.pdf 
AON675230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.18. Size:345K aosemi
aon6796.pdf 
AON679630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.19. Size:257K aosemi
aon6704a.pdf 
AON6704A30V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6704A uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
9.20. Size:128K aosemi
aon6710.pdf 
AON671030V N-Channel MOSFETSRFET TM General Description Product SummaryVDS (V) = 30VSRFETTM The AON6710 uses advanced trenchID = 20A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON) and low gateRDS(ON)
9.21. Size:255K aosemi
aon6782.pdf 
AON678230V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
Другие MOSFET... AON6586
, AON6588
, AON6594
, AON6596
, AON6752
, AON6754
, AON6756
, AON6758
, IRFZ48N
, AON6774
, AON6780
, AON6782
, AON6810
, AON6812
, AON6816
, AON6850
, AON6884
.
History: HY3208APM
| FMP20N50E
| ME4972-G
| HY1803C2
| P4506BD
| DAMH50N500H
| OSG65R070PT3F
