AON6912A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AON6912A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 22(30) W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 34(52) A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9(2) ns
Cossⓘ - Выходная емкость: 125(490) pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0137(0.0073) Ohm
Тип корпуса: DFN5X6B
- подбор MOSFET транзистора по параметрам
AON6912A Datasheet (PDF)
aon6912a.pdf

AON6912A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912A is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V)
aon6912.pdf

AON691230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6918.pdf

AON691825V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6918 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6910a.pdf

AON6910A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6910A is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V)37APower DFN5x6B package. The Q1 "High Side" MOSFET is
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 2SK308 | RFD14N05L | STP5NB40 | FDD5N60NZTM | TPC8081 | NTHS5404 | 2SK3532
History: 2SK308 | RFD14N05L | STP5NB40 | FDD5N60NZTM | TPC8081 | NTHS5404 | 2SK3532



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