AON7406 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AON7406
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 15.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 3.5 ns
Cossⓘ - Выходная емкость: 110 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: DFN3X3EP
AON7406 Datasheet (PDF)
aon7406.pdf
AON740630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7406 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25AThis device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)
aon7406.pdf
AON740630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7406 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25AThis device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)
aon7405.pdf
AON740530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)
aon7408.pdf
AON740830V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7408 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18AThis device is suitable for use in general purpose RDS(ON) (at VGS=10V)
aon7403.pdf
AON740330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7403 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
aon7400a.pdf
AON7400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
aon7409.pdf
AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
aon7401.pdf
AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
aon7407.pdf
AON740720V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AON7407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
aon7400.pdf
AON740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7400 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26AThis device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V)
aon7405.pdf
AON740530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)
aon7402.pdf
AON740230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7402 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
aon7408.pdf
AON740830V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7408 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18AThis device is suitable for use in general purpose RDS(ON) (at VGS=10V)
aon7403.pdf
AON740330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7403 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
aon7400a.pdf
AON7400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
aon7409.pdf
AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
aon7401.pdf
AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
aon7404g.pdf
AON7404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
aon7407.pdf
AON740720V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AON7407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
aon7404.pdf
AON740420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7404 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STF11N50M2
History: STF11N50M2
Список транзисторов
Обновления
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