AON7410 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AON7410
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 3.2 ns
Cossⓘ - Выходная емкость: 110 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: DFN3X3EP
AON7410 Datasheet (PDF)
aon7410.pdf
AON741030V N-Channel MOSFETGeneral Description FeaturesThe AON7410 uses advanced trench technology and design VDS (V) = 30Vto provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)device is suitable for use in DC - DC converters and Load RDS(ON)
aon7410.pdf
AON741030V N-Channel MOSFETGeneral Description FeaturesThe AON7410 uses advanced trench technology and design VDS (V) = 30Vto provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)device is suitable for use in DC - DC converters and Load RDS(ON)
aon7418.pdf
AON741830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aon7414.pdf
AON741430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon7416.pdf
AON741630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7416 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 40Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon7418.pdf
AON741830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aon7412.pdf
AON741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7412 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 16Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918