Справочник MOSFET. AON7410

 

AON7410 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON7410
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 20 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 24 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 9.8 nC
   Время нарастания (tr): 3.2 ns
   Выходная емкость (Cd): 110 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
   Тип корпуса: DFN3X3EP

 Аналог (замена) для AON7410

 

 

AON7410 Datasheet (PDF)

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 aon7410.pdf

AON7410 AON7410

AON741030V N-Channel MOSFETGeneral Description FeaturesThe AON7410 uses advanced trench technology and design VDS (V) = 30Vto provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)device is suitable for use in DC - DC converters and Load RDS(ON)

 ..2. Size:338K  aosemi
 aon7410.pdf

AON7410 AON7410

AON741030V N-Channel MOSFETGeneral Description FeaturesThe AON7410 uses advanced trench technology and design VDS (V) = 30Vto provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)device is suitable for use in DC - DC converters and Load RDS(ON)

 8.1. Size:257K  1
 aon7418.pdf

AON7410 AON7410

AON741830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:288K  aosemi
 aon7414.pdf

AON7410 AON7410

AON741430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 8.3. Size:385K  aosemi
 aon7416.pdf

AON7410 AON7410

AON741630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7416 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 40Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 8.4. Size:257K  aosemi
 aon7418.pdf

AON7410 AON7410

AON741830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 8.5. Size:247K  aosemi
 aon7412.pdf

AON7410 AON7410

AON741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7412 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 16Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

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