AON7421 - описание и поиск аналогов

 ..1. Size:267K  1
 aon7421.pdf 

AON7421 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 ..2. Size:267K  aosemi
 aon7421.pdf 

AON7421 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 8.1. Size:465K  1
 aon7423.pdf 

AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 8.2. Size:238K  aosemi
 aon7424.pdf 

AON7424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7424 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 8.3. Size:290K  aosemi
 aon7423.pdf 

AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 8.4. Size:163K  aosemi
 aon7428.pdf 

AON7428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7428 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50A This device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

 8.5. Size:352K  aosemi
 aon7422e.pdf 

AON7422E 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 8.6. Size:259K  aosemi
 aon7422g.pdf 

AON7422G 30V N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)

 8.7. Size:274K  aosemi
 aon7426.pdf 

AON7426 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 8.8. Size:164K  aosemi
 aon7422l.pdf 

AON7422 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40A This device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

 8.9. Size:1620K  cn vbsemi
 aon7422l.pdf 

AON7422L www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control Industri