HAT2050T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HAT2050T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 90 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
Тип корпуса: TSSOP8
HAT2050T Datasheet (PDF)
rej03g1171 hat2050tds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
e208661 hat2051t.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1174 hat2058rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
e2081636 hat2057ra.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2054m.pdf
HAT2054MSilicon N Channel Power MOS FETPower SwitchingADE-208-756B (Z)Preliminary 3rd. EditionDec. 1998Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V sourceOutlineTSOP645631 2 5 62D D D D13G4 Source3 Gate1, 2, 5, 6 DrainS4HAT2054MAbsolute Maximum Ratings (Ta
hat2052t.pdf
HAT2052TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-724C (Z)4th. EditionFeb. 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DrainS SS S2, 3, 6, 7 Source2 3 674, 5 GateMOS2MOS1HAT2052TAbsolute Maximum Rati
Другие MOSFET... HAT2039R , HAT2040R , HAT2042T , HAT2043R , HAT2044R , HAT2045T , HAT2046R , HAT2049T , IRFP460 , HAT2051T , HAT2052T , HAT2053M , HAT2054M , HAT2058R , HAT2061R , HAT2064R , HAT2065R .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918