AOT10N60 - описание и поиск аналогов

 ..1. Size:375K  aosemi
 aot10n60.pdf 

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 ..2. Size:429K  aosemi
 aot10n60 aob10n60 aotf10n60.pdf 

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 ..3. Size:260K  inchange semiconductor
 aot10n60.pdf 

isc N-Channel MOSFET Transistor AOT10N60 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 7.1. Size:203K  aosemi
 aot10n65.pdf 

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.2. Size:261K  inchange semiconductor
 aot10n65.pdf 

isc N-Channel MOSFET Transistor AOT10N65 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:284K  aosemi
 aot10t60p.pdf 

AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max

 9.2. Size:654K  aosemi
 aot10b60d.pdf 

AOT10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

 9.3. Size:1525K  aosemi
 aot10b65m2.pdf 

AOT10B65M2 TM 650V, 10A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 10A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.6V High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

 9.4. Size:582K  aosemi
 aot10b60m1.pdf 

AOT10B60M1 TM 600V,10A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 600V 600V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.3V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 9.5. Size:1183K  aosemi
 aot10b65m1.pdf 

AOT10B65M1/AOB10B65M1 TM 650V, 10A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(SAT) enables high

 9.6. Size:592K  aosemi
 aot10b65mq2.pdf 

AOT10B65MQ2 TM 650V, 10A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci