AOT11C60 - описание и поиск аналогов

 ..1. Size:470K  aosemi
 aot11c60.pdf 

AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700 The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET IDM 80A process that is designed to deliver high levels of RDS(ON),max

 9.1. Size:299K  aosemi
 aot11s65.pdf 

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

 9.2. Size:292K  aosemi
 aot1100l.pdf 

AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 100V The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 130A conversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 9.3. Size:579K  aosemi
 aot11s60l aob11s60l aotf11s60l aotf11s60.pdf 

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 TM 600V 11A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced IDM 45A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.399W levels of performance and robustness in switching applications. Qg,typ 11

 9.4. Size:218K  aosemi
 aot11n70.pdf 

AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.5. Size:299K  aosemi
 aot11s65 aob11s65 aotf11s65.pdf 

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

 9.6. Size:292K  aosemi
 aot11s60l.pdf 

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin

 9.7. Size:545K  aosemi
 aot11n60.pdf 

AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60 & AOTF11N60 have been fabricated 700V@150 using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.8. Size:292K  aosemi
 aot11s60.pdf 

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin

 9.9. Size:457K  aosemi
 aot11n60l aotf11n60l aotf11n60.pdf 

AOT11N60L/AOTF11N60L/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60L & AOTF11N60L & AOTF11N60 700V@150 have been fabricated using an advanced high voltage ID (at VGS=10V) 11A MOSFET process that is designed to deliver high RDS(ON) (at VGS=10V)

 9.10. Size:300K  aosemi
 aot11s65l.pdf 

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

 9.11. Size:260K  inchange semiconductor
 aot11s65.pdf 

isc N-Channel MOSFET Transistor AOT11S65 FEATURES Drain Current I =11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.12. Size:259K  inchange semiconductor
 aot1100l.pdf 

isc N-Channel MOSFET Transistor AOT1100L FEATURES Drain Current I = 130A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.13. Size:261K  inchange semiconductor
 aot11n70.pdf 

isc N-Channel MOSFET Transistor AOT11N70 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.87 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.14. Size:260K  inchange semiconductor
 aot11s60l.pdf 

isc N-Channel MOSFET Transistor AOT11S60L FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.15. Size:260K  inchange semiconductor
 aot11n60.pdf 

isc N-Channel MOSFET Transistor AOT11N60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo