AOT1404L - описание и поиск аналогов

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 aot1404l.pdf 

AOT1404L/AOB1404L 40V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 40V The AOT1404L/AOB1404L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 220A conversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 ..2. Size:425K  aosemi
 aot1404l aob1404l.pdf 

AOT1404L/AOB1404L 40V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 40V The AOT1404L/AOB1404L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 220A conversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 ..3. Size:259K  inchange semiconductor
 aot1404l.pdf 

isc N-Channel MOSFET Transistor AOT1404L FEATURES Drain Current I = 220A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

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 aot14n50.pdf 

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

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 aot14n50fd.pdf 

AOT14N50FD/AOTF14N50FD 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT14N50FD/AOTF14N50FD have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 14A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

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 aot14n50 aotf14n50.pdf 

AOT14N50 / AOTF14N50 500V, 14A N-Channel MOSFET General Description Features The AOT14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process VDS (V) = 600V@150 C that is designed to deliver high levels of performance ID=14A and robustness in popular AC-DC applications. RDS(ON)

 9.4. Size:260K  inchange semiconductor
 aot14n50.pdf 

isc N-Channel MOSFET Transistor AOT14N50 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.5. Size:260K  inchange semiconductor
 aot14n50fd.pdf 

isc N-Channel MOSFET Transistor AOT14N50FD FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.47 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu