AOT15S60. Аналоги и основные параметры

Наименование производителя: AOT15S60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 208 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 22 ns

Cossⓘ - Выходная емкость: 58 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT15S60

- подборⓘ MOSFET транзистора по параметрам

 

AOT15S60 даташит

 ..1. Size:343K  aosemi
 aot15s60.pdf pdf_icon

AOT15S60

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

 ..2. Size:343K  aosemi
 aot15s60 aob15s60 aotf15s60.pdf pdf_icon

AOT15S60

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

 ..3. Size:260K  inchange semiconductor
 aot15s60.pdf pdf_icon

AOT15S60

isc N-Channel MOSFET Transistor AOT15S60 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 0.1. Size:557K  aosemi
 aot15s60l aob15s60l aotf15s60l aotf15s60.pdf pdf_icon

AOT15S60

AOT15S60L/AOB15S60L/AOTF15S60L/AOTF15S60 TM 600V 15A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60L & AOB15S60L & AOTF15S60L & AOTF15S60 IDM 63A have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance RDS(ON),max 0.29W and robustness in switching applications. Qg,typ 16n

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AOT12N50, AOT12N60, AOT12N60FD, AOT12N65, AOT13N50, AOT1404L, AOT14N50, AOT14N50FD, IRFP260N, AOT1606L, AOT1608L, AOT16N50, AOT1N60, AOT20C60, AOT20N25, AOT20N60, AOT20S60