HAT2054M - Даташиты. Аналоги. Основные параметры

HAT2054M Silicon N Channel Power MOS FET Power Switching ADE-208-756B (Z) Preliminary 3rd. Edition Dec. 1998 Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP 6 4 5 6 3 1 2 5 6 2 D D D D 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2054M Absolute Maximum Ratings (Ta

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

HAT2052T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-724C (Z) 4th. Edition Feb. 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP 8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 Drain S S S S 2, 3, 6, 7 Source 2 3 6 7 4, 5 Gate MOS2 MOS1 HAT2052T Absolute Maximum Rati