AOT286L - описание и поиск аналогов

 ..1. Size:390K  aosemi
 aot286l aob286l.pdf 

AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 ..2. Size:285K  aosemi
 aot286l.pdf 

AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 ..3. Size:245K  inchange semiconductor
 aot286l.pdf 

isc N-Channel MOSFET Transistor AOT286L FEATURES Static drain-source on-resistance RDS(on) 6m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. AB

 9.1. Size:276K  aosemi
 aot282l aob282l.pdf 

 9.2. Size:269K  aosemi
 aot280l aob280l.pdf 

AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.3. Size:276K  aosemi
 aot282l.pdf 

 9.4. Size:378K  aosemi
 aot284l.pdf 

AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary VDS The AOT284L & AOB284L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.5. Size:272K  aosemi
 aob284l aot284l.pdf 

 9.6. Size:269K  aosemi
 aot280l.pdf 

AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.7. Size:488K  aosemi
 aot280a60l.pdf 

AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

 9.8. Size:488K  aosemi
 aotf280a60l aot280a60l aob280a60l.pdf 

AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

 9.9. Size:363K  aosemi
 aot288l aob288l aotf288l.pdf 

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.10. Size:363K  aosemi
 aot288l.pdf 

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.11. Size:272K  aosemi
 aot284l aob284l.pdf 

 9.12. Size:260K  inchange semiconductor
 aot282l.pdf 

isc N-Channel MOSFET Transistor AOT282L FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 9.13. Size:245K  inchange semiconductor
 aot284l.pdf 

isc N-Channel MOSFET Transistor AOT284L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.14. Size:245K  inchange semiconductor
 aot280l.pdf 

isc N-Channel MOSFET Transistor AOT280L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 2.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.15. Size:245K  inchange semiconductor
 aot288l.pdf 

isc N-Channel MOSFET Transistor AOT288L FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 9.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener