Справочник MOSFET. AOT288L

 

AOT288L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT288L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 93.5 W

Предельно допустимое напряжение сток-исток (Uds): 80 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3.4 V

Максимально допустимый постоянный ток стока (Id): 46 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 8.5 ns

Выходная емкость (Cd): 265 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0092 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT288L

 

 

AOT288L Datasheet (PDF)

1.1. aot288l.pdf Size:363K _aosemi

AOT288L
AOT288L

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 9.2mΩ(< 8.9mΩ*) Both conduction and switching power losses are RDS(ON) (at VGS=6V)

5.1. aot282l.pdf Size:276K _aosemi

AOT288L
AOT288L

AOT282L/AOB282L 80V N-Channel MOSFET General Description Product Summary VDS The AOT282L & AOB282L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.2m

5.2. aot284l.pdf Size:272K _aosemi

AOT288L
AOT288L

AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary VDS The AOT284L & AOB284L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.3mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.7m

 5.3. aot280l.pdf Size:269K _aosemi

AOT288L
AOT288L

AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 2.7mΩ (< 2.2mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 3.5mΩ (< 3.1mΩ∗) conduction and switching power losses are

5.4. aot286l.pdf Size:285K _aosemi

AOT288L
AOT288L

AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 6.0mΩ (< 5.7mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 7.9mΩ (< 7.6mΩ∗) conduction and switching power losses are

Другие MOSFET... AOT264L , AOT266L , AOT270AL , AOT27S60 , AOT280L , AOT282L , AOT284L , AOT286L , IRFP260 , AOT290L , AOT2910L , AOT2916L , AOT2918L , AOT292L , AOT296L , AOT298L , AOT29S50 .

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MOSFET: TMD5N60Z | TMD5N60AZ | TMD5N50G | TMD5N50 | TMD5N40ZG | TMD4N65Z | TMD4N65AZ | TMD4N60AZ | TMD4N60 | TMD3N90 | TMD3N80G | TMD3N50Z | TMD3N50AZ | TMD3N40ZG | TMD2N65AZ |
 


 

 

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