AOT2910L - описание и поиск аналогов

 ..1. Size:381K  aosemi
 aob2910l aot2910l aotf2910l.pdf 

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..2. Size:434K  aosemi
 aot2910l aob2910l aotf2910l.pdf 

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..3. Size:434K  aosemi
 aot2910l.pdf 

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..4. Size:245K  inchange semiconductor
 aot2910l.pdf 

isc N-Channel MOSFET Transistor AOT2910L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 8.1. Size:409K  aosemi
 aot2916l.pdf 

AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2916L & AOTF2916L uses trench MOSFET 100V technology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.2. Size:381K  aosemi
 aot2918l.pdf 

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.3. Size:345K  aosemi
 aot2916l aotf2916l.pdf 

 8.4. Size:265K  inchange semiconductor
 aot2916l.pdf 

isc N-Channel MOSFET Transistor AOT2916L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =34m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.5. Size:245K  inchange semiconductor
 aot2918l.pdf 

isc N-Channel MOSFET Transistor AOT2918L FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener