AOT3N50 - описание и поиск аналогов

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 aot3n50.pdf 

AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 3A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:261K  inchange semiconductor
 aot3n50.pdf 

isc N-Channel MOSFET Transistor AOT3N50 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:383K  aosemi
 aot3n100 aotf3n100.pdf 

AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 9.2. Size:329K  aosemi
 aot3n100.pdf 

AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 9.3. Size:184K  aosemi
 aot3n60.pdf 

AOT3N60 600V,2.5A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.5A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 9.4. Size:261K  inchange semiconductor
 aot3n100.pdf 

isc N-Channel MOSFET Transistor AOT3N100 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.5. Size:261K  inchange semiconductor
 aot3n60.pdf 

isc N-Channel MOSFET Transistor AOT3N60 FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =3.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose