Справочник MOSFET. AOT412

 

AOT412 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT412

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 150 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 25 V

Пороговое напряжение включения Ugs(th): 3.8 V

Максимально допустимый постоянный ток стока (Id): 60 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 16 ns

Выходная емкость (Cd): 260 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0158 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT412

 

 

AOT412 Datasheet (PDF)

1.1. aot412.pdf Size:313K _aosemi

AOT412
AOT412

AOT412/AOB412L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT412 & AOB412L are fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60A low gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V) < 15.8mΩ efficiency with controlled switching behavior. This RDS(ON) (at VGS = 7V) < 19.4m

5.1. aot410l.pdf Size:344K _aosemi

AOT412
AOT412

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) with controlled switching behavior. This universal RDS(ON)

5.2. aot416.pdf Size:199K _aosemi

AOT412
AOT412

AOT416 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOT416 is fabricated with SDMOSTM trench ID (at VGS=10V) 42A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 37mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 43mΩ

 5.3. aot414.pdf Size:325K _aosemi

AOT412
AOT412

AOT414 100V N-channel MOSFET General Description Product Summary VDS 100V The AOT414 is fabricated with SDMOSTM trench ID (at VGS=10V) 43A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 25mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 31mΩ suited for

5.4. aot418l.pdf Size:296K _aosemi

AOT412
AOT412

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D < 10mΩ gate charge and low Qrr.The result is outstanding RDS(ON) (at VGS=10V) efficiency with controlled switching behavior. This < 12mΩ RDS(ON) (at VGS = 7

Другие MOSFET... AOT298L , AOT29S50 , AOT2N60 , AOT3N100 , AOT3N50 , AOT3N60 , AOT404 , AOT410L , 2SK3568 , AOT414 , AOT416 , AOT418L , AOT424 , AOT42S60 , AOT430 , AOT440 , AOT460 .

Back to Top

 


AOT412
  AOT412
  AOT412
 

social 

Список транзисторов

Обновления

MOSFET: IRFR13N20DPBF | IRFR13N15DPBF | IRFR130ATM | IRFR12N25DPBF | IRFR120ZPBF | IRFR120PBF | IRFR120NPBF | IRFR120ATM | IRFR1205PBF | IRFR110PBF | IRFR1018EPBF | IRFR1010ZPBF | IRFR024PBF | IRFR024NPBF | IRFR020PBF |