AOT9N70
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOT9N70
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 236
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 9
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 28.5
nC
trⓘ -
Время нарастания: 61
ns
Cossⓘ - Выходная емкость: 113
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2
Ohm
Тип корпуса:
TO-220
Аналог (замена) для AOT9N70
AOT9N70
Datasheet (PDF)
..1. Size:403K 1
aot9n70 aotf9n70 aob9n70.pdf 
AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
..2. Size:528K aosemi
aot9n70.pdf 
AOT9N70/AOTF9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
..3. Size:261K inchange semiconductor
aot9n70.pdf 
isc N-Channel MOSFET Transistor AOT9N70FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.1. Size:252K aosemi
aot9n40.pdf 
AOT9N40400V,8A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT9N40 is fabricated using an advanced high 500V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V)8Alevels of performance and robustness in popular AC-DC
9.2. Size:252K aosemi
aot9n40l.pdf 
AOT9N40400V,8A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT9N40 is fabricated using an advanced high 500V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V)8Alevels of performance and robustness in popular AC-DC
9.3. Size:159K aosemi
aot9n50.pdf 
AOT9N50/AOTF9N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT9N50 & AOTF9N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.4. Size:261K inchange semiconductor
aot9n40.pdf 
isc N-Channel MOSFET Transistor AOT9N40FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.5. Size:261K inchange semiconductor
aot9n50.pdf 
isc N-Channel MOSFET Transistor AOT9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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