Справочник MOSFET. AOTF10N50FD

 

AOTF10N50FD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AOTF10N50FD
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 112 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для AOTF10N50FD

   - подбор ⓘ MOSFET транзистора по параметрам

 

AOTF10N50FD Datasheet (PDF)

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AOTF10N50FD

AOTF10N50FD500V, 10A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF10N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 ..2. Size:251K  inchange semiconductor
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AOTF10N50FD

isc N-Channel MOSFET Transistor AOTF10N50FDFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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AOTF10N50FD

AOTF10N90900V, 10A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF10N90 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 7.2. Size:203K  aosemi
aotf10n65.pdfpdf_icon

AOTF10N50FD

AOT10N65/AOTF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT10N65 & AOTF10N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

Другие MOSFET... AOT7S65 , AOT8N50 , AOT8N60 , AOT8N65 , AOT8N80 , AOT9N40 , AOT9N50 , AOT9N70 , HY1906P , AOTF10N60 , AOTF10N65 , AOTF10N90 , AOTF10T60 , AOTF10T60P , AOTF11C60 , AOTF11N60 , AOTF11N62 .

History: CED6861 | JCS5N65FB | IRFZ44NSPBF | 2SK1837

 

 
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