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AOTF12N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOTF12N50

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 50 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4.5 V

Максимально допустимый постоянный ток стока (Id): 12 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 69 ns

Выходная емкость (Cd): 167 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.52 Ohm

Тип корпуса: TO-220F

Аналог (замена) для AOTF12N50

 

 

AOTF12N50 Datasheet (PDF)

1.1. aotf12n50.pdf Size:433K _aosemi

AOTF12N50
AOTF12N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

3.1. aotf12n30.pdf Size:324K _aosemi

AOTF12N50
AOTF12N50

AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150℃ The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.42Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along wi

3.2. aotf12n60fd.pdf Size:590K _aosemi

AOTF12N50
AOTF12N50

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

 3.3. aotf12n60.pdf Size:450K _aosemi

AOTF12N50
AOTF12N50

AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.55Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al

3.4. aotf12n65.pdf Size:381K _aosemi

AOTF12N50
AOTF12N50

AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

Другие MOSFET... AOTF10T60P , AOTF11C60 , AOTF11N60 , AOTF11N62 , AOTF11N70 , AOTF11S60 , AOTF11S65 , AOTF12N30 , IRF640 , AOTF12N60 , AOTF12N60FD , AOTF12N65 , AOTF12T50P , AOTF12T50PL , AOTF12T60 , AOTF12T60P , AOTF13N50 .

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MOSFET: MDZ1N60UMH | MDV5524URH | MDV3605URH | MDV3604URH | MDV1595SURH | MDV1548URH | MDV1545URH | MDV1542URH | MDV1529EURH | MDV1528URH | MDV1527URH | MDV1526URH | MDV1525URH | MDV1524URH | MDV1523URH |
 


 

 

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