Справочник MOSFET. AOTF14N50FD

 

AOTF14N50FD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF14N50FD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 38.8 nC
   trⓘ - Время нарастания: 94 ns
   Cossⓘ - Выходная емкость: 179 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для AOTF14N50FD

 

 

AOTF14N50FD Datasheet (PDF)

 ..1. Size:232K  aosemi
aotf14n50fd.pdf

AOTF14N50FD AOTF14N50FD

AOT14N50FD/AOTF14N50FD500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50FD/AOTF14N50FD have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 14Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:250K  inchange semiconductor
aotf14n50fd.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF14N50FDFEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.47(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 5.1. Size:258K  aosemi
aotf14n50.pdf

AOTF14N50FD AOTF14N50FD

AOT14N50/AOB14N50/AOTF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50 &AOB14N50 & AOTF14N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 5.2. Size:250K  inchange semiconductor
aotf14n50.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.1. Size:558K  aosemi
aotf15b65m1.pdf

AOTF14N50FD

AOTF15B65M1TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

 9.2. Size:359K  aosemi
aotf18n65.pdf

AOTF14N50FD AOTF14N50FD

AOTF18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOTF18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.3. Size:733K  aosemi
aotf15b60d.pdf

AOTF14N50FD AOTF14N50FD

AOTF15B60DTM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

 9.4. Size:721K  aosemi
aotf10b60d2.pdf

AOTF14N50FD AOTF14N50FD

AOTF10B60D2TM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 9.5. Size:381K  aosemi
aotf12n65.pdf

AOTF14N50FD AOTF14N50FD

AOT12N65/AOTF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT12N65 & AOTF12N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.6. Size:433K  aosemi
aotf12n50.pdf

AOTF14N50FD AOTF14N50FD

AOT12N50/AOB12N50/AOTF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT12N50 & AOB12N50 & AOTF12N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.7. Size:447K  aosemi
aotf12t50p.pdf

AOTF14N50FD AOTF14N50FD

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 9.8. Size:302K  aosemi
aotf15s65l.pdf

AOTF14N50FD AOTF14N50FD

AOT15S65/AOB15S65/AOTF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT15S65 & AOB15S65 & AOTF15S65 have beenfabricated using the advanced MOSTM high voltage IDM 60Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 17.2nCBy provid

 9.9. Size:359K  aosemi
aotf18n65l.pdf

AOTF14N50FD AOTF14N50FD

AOTF18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOTF18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.10. Size:572K  aosemi
aotf15b65m3.pdf

AOTF14N50FD AOTF14N50FD

AOTF15B65M3TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V Breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.95VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

 9.11. Size:343K  aosemi
aotf15s60.pdf

AOTF14N50FD AOTF14N50FD

AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing

 9.12. Size:1325K  aosemi
aotf10b65m1.pdf

AOTF14N50FD

AOTF10B65M1TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 9.13. Size:385K  aosemi
aot12n65 aotf12n65 aob12n65.pdf

AOTF14N50FD AOTF14N50FD

AOT12N65/AOTF12N65/AOB12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT12N65 & AOTF12N65 & AOB12N65 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.14. Size:296K  aosemi
aotf10n90.pdf

AOTF14N50FD AOTF14N50FD

AOTF10N90900V, 10A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF10N90 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 9.15. Size:218K  aosemi
aotf11n70.pdf

AOTF14N50FD AOTF14N50FD

AOT11N70/AOTF11N70700V,11A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT11N70 & AOTF11N70 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.16. Size:203K  aosemi
aotf10n65.pdf

AOTF14N50FD AOTF14N50FD

AOT10N65/AOTF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT10N65 & AOTF10N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.17. Size:587K  aosemi
aotf15b65mq1.pdf

AOTF14N50FD AOTF14N50FD

AOTF15B65MQ1TM 650V, 15A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

 9.18. Size:299K  aosemi
aotf11s65.pdf

AOTF14N50FD AOTF14N50FD

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

 9.19. Size:450K  aosemi
aotf12n60.pdf

AOTF14N50FD AOTF14N50FD

AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.20. Size:1205K  aosemi
aotf15b65m2.pdf

AOTF14N50FD

AOTF15B65M2TM650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

 9.21. Size:544K  aosemi
aotf11n62.pdf

AOTF14N50FD AOTF14N50FD

AOTF11N62620V,11A N-Channel MOSFETGeneral Description Product Summary VDS720V@150The AOTF11N62 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 9.22. Size:1182K  aosemi
aotf10b65m2.pdf

AOTF14N50FD

AOTF10B65M2TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

 9.23. Size:728K  aosemi
aotf10b60d.pdf

AOTF14N50FD AOTF14N50FD

AOTF10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 9.24. Size:324K  aosemi
aotf12n30.pdf

AOTF14N50FD AOTF14N50FD

AOT12N30/AOTF12N30300V,11.5A N-Channel MOSFETGeneral Description Product Summary VDS350V@150The AOT12N30/AOTF12N30 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 9.25. Size:545K  aosemi
aotf11n60.pdf

AOTF14N50FD AOTF14N50FD

AOT11N60/AOTF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT11N60 & AOTF11N60 have been fabricated 700V@150using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.26. Size:376K  aosemi
aotf190a60l.pdf

AOTF14N50FD AOTF14N50FD

AOTF190A60LTM600V, MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

 9.27. Size:292K  aosemi
aotf11s60.pdf

AOTF14N50FD AOTF14N50FD

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

 9.28. Size:468K  aosemi
aotf10t60.pdf

AOTF14N50FD AOTF14N50FD

AOT10T60/AOTF10T60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700VThe AOT10T60 & AOTF10T60 are fabricated using anadvanced high voltage MOSFET process that is designed IDM 40Ato deliver high levels of performance and robustness in RDS(ON),max

 9.29. Size:590K  aosemi
aotf12n60fd.pdf

AOTF14N50FD AOTF14N50FD

AOT12N60FD/AOB12N60FD/AOTF12N60FD600V, 12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60FD/AOB12N60FD/AOTF12N60FD havebeen fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.30. Size:302K  aosemi
aotf15s65.pdf

AOTF14N50FD AOTF14N50FD

AOT15S65/AOB15S65/AOTF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT15S65 & AOB15S65 & AOTF15S65 have beenfabricated using the advanced MOSTM high voltage IDM 60Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 17.2nCBy provid

 9.31. Size:233K  aosemi
aotf12t60.pdf

AOTF14N50FD AOTF14N50FD

AOTF12T60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 9.32. Size:575K  aosemi
aot12n60 aotf12n60.pdf

AOTF14N50FD AOTF14N50FD

AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.33. Size:284K  aosemi
aotf10t60p.pdf

AOTF14N50FD AOTF14N50FD

AOT10T60P/AOB10T60P/AOTF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max

 9.34. Size:721K  aosemi
aotf15b60d2.pdf

AOTF14N50FD AOTF14N50FD

AOTF15B60D2TM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 9.35. Size:375K  aosemi
aotf10n60.pdf

AOTF14N50FD AOTF14N50FD

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.36. Size:343K  aosemi
aotf15s60l.pdf

AOTF14N50FD AOTF14N50FD

AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing

 9.37. Size:470K  aosemi
aotf11c60.pdf

AOTF14N50FD AOTF14N50FD

AOT11C60/AOB11C60/AOTF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOT11C60 & AOB11C60 & AOTF11C60 arefabricated using an advanced high voltage MOSFET IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max

 9.38. Size:300K  aosemi
aotf11s65l.pdf

AOTF14N50FD AOTF14N50FD

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

 9.39. Size:159K  aosemi
aotf13n50.pdf

AOTF14N50FD AOTF14N50FD

AOT13N50/AOTF13N50500V, 13A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT13N50 & AOTF13N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 13Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.40. Size:498K  aosemi
aotf12t60p.pdf

AOTF14N50FD AOTF14N50FD

AOB12T60P/AOTF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 9.41. Size:160K  aosemi
aotf16n50.pdf

AOTF14N50FD AOTF14N50FD

AOT16N50/AOTF16N50500V, 16A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT16N50 & AOTF16N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 16Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.42. Size:330K  aosemi
aotf10n50fd.pdf

AOTF14N50FD AOTF14N50FD

AOTF10N50FD500V, 10A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF10N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 9.43. Size:447K  aosemi
aotf12t50pl.pdf

AOTF14N50FD AOTF14N50FD

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 9.44. Size:581K  aosemi
aotf10b65mq2.pdf

AOTF14N50FD AOTF14N50FD

AOTF10B65MQ2TM 650V, 10A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

 9.45. Size:252K  inchange semiconductor
aotf18n65.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF18N65FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.46. Size:250K  inchange semiconductor
aotf12n65.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF12N65FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.47. Size:259K  inchange semiconductor
aotf12n50.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF12N50FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.48. Size:250K  inchange semiconductor
aotf15s65l.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF15S65LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 9.49. Size:251K  inchange semiconductor
aotf15s60.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF15S60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.50. Size:252K  inchange semiconductor
aotf10n90.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF10N90FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =0.98(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.51. Size:252K  inchange semiconductor
aotf11n70.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF11N70FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.87(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.52. Size:255K  inchange semiconductor
aotf10n65.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF10N65FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 9.53. Size:250K  inchange semiconductor
aotf11s65.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.54. Size:250K  inchange semiconductor
aotf12n60.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF12N60FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.55. Size:251K  inchange semiconductor
aotf11n62.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF11N62FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 620V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.56. Size:252K  inchange semiconductor
aotf12n30.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF12N30FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 9.57. Size:251K  inchange semiconductor
aotf11n60.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.58. Size:201K  inchange semiconductor
aotf190a60l.pdf

AOTF14N50FD AOTF14N50FD

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOTF190A60LFEATURESWith To-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 9.59. Size:253K  inchange semiconductor
aotf11s60.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 9.60. Size:250K  inchange semiconductor
aotf12n60fd.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF12N60FDFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.61. Size:250K  inchange semiconductor
aotf15s65.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF15S65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.62. Size:250K  inchange semiconductor
aotf10n60.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.63. Size:251K  inchange semiconductor
aotf15s60l.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF15S60LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 9.64. Size:252K  inchange semiconductor
aotf13n50.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF13N50FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.51(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.65. Size:226K  inchange semiconductor
aotf16n50.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel Mosfet Transistor AOTF16N50FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSLow ON Resistance R = 0.37(Max)DS(on)Low leakage currentFast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.ABSOLUTE

 9.66. Size:251K  inchange semiconductor
aotf10n50fd.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF10N50FDFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 9.67. Size:250K  inchange semiconductor
aotf12n65l.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF12N65LFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.68. Size:251K  inchange semiconductor
aotf12t50pl.pdf

AOTF14N50FD AOTF14N50FD

isc N-Channel MOSFET Transistor AOTF12T50PLFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONGeneral Lighting for LED and CCFLAC/DC Power suppliesABSOL

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